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BTA201W series E
1 A Three-quadrant triacs high commutation
Rev. 02 -- 17 September 2007 Product data sheet
1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a surface-mounted plastic package, intended for interfacing with low-power drivers, including microcontrollers.
1.2 Features
I Suitable for interfacing with low-power drivers, including microcontrollers I SOT223 surface mounted
1.3 Applications
I Motor control I Solenoid drivers
1.4 Quick reference data
I ITSM 12.5 A I VDRM 600 V (BTA201W-600E) I VDRM 800 V (BTA201W-800E) I IT(RMS) 1 A I IGT 10 mA
2. Pinning information
Table 1. Pin 1 2 3 4 Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) main terminal 2 (T2)
1 2 3 4 T2
sym051
Simplified outline
Symbol
T1 G
SOT223
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
3. Ordering information
Table 2. Ordering information Package Name BTA201W-600E BTA201W-800E SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current Conditions BTA201W-600E BTA201W-800E full sine wave; Tsp 106 C; see Figure 4 and 5 full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM PGM PG(AV) Tstg Tj
[1]
[1]
Min -
Max 600 800 1
Unit V V A
-
12.5 13.7 0.78 100 2 5 0.1 +150 125
A A A2s A/s A W W C C
I2t
for fusing
t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s
rate of rise of on-state current peak gate current peak gate power average gate power storage temperature junction temperature
over any 20 ms period
-40 -
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s.
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
2 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
1.5
003aab299
Ptot (W)
= 180 120 90 60 30
1.0
0.5
0.0 0 0.2 0.4 0.6 0.8 1 IT(RMS) (A) 1.2
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
16 ITSM (A) 12
001aag959
8 IT 4 ITSM t T Tj(init) = 25 C max 0 1 10 102 number of cycles (n) 103
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
3 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
103 IT ITSM (A)
001aag958
ITSM t T Tj(init) = 25 C max
(1)
102
10 10-5
10-4
10-3
10-2 tp (s)
10-1
tp 20 ms (1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
001aag963
6 IT(RMS) (A) 4
1.2 IT(RMS) (A) 1.0
001aag964
0.8
0.6
2
0.4
0.2
0 10-2
10-1
1 10 surge duration (s)
0 -50
0
50
100 Tsp (C)
150
f = 50 Hz; Tsp = 106 C
Fig 4. RMS on-state current as a function of surge duration; maximum values
Fig 5. RMS on-state current as a function of solder point temperature; maximum values
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
4 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4. Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions see Figure 6 minimum footprint; see Figure 14 for pad area; see Figure 15
[1] [1]
Min -
Typ 156 70
Max 15 -
Unit K/W K/W K/W
[1]
Mounted on a printed-circuit board.
102 Zth(j-sp) (K/W) 10
001aag969
(1)
1
(2)
P
10-1
10-2 10-5
tp
t
10-4
10-3
10-2
10-1
1 tp (s)
10
(1) Unidirectional (2) Bidirectional
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
5 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics Tj = 25 C unless otherwise specified. Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G- T2- G- IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G- T2- G- IH VT VGT ID holding current on-state voltage gate trigger voltage off-state current VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 1.4 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C 0.2 1.2 0.7 0.3 0.1 12 20 12 12 1.5 1.5 0.5 mA mA mA mA V V V mA 10 10 10 mA mA mA Min Typ Max Unit BTA201W-600E and BTA201W-800E
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
6 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Symbol dVD/dt dIcom/dt Dynamic characteristics Parameter rate of rise of off-state voltage rate of change of commutating current Conditions VDM = 0.67VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 4 A; gate open circuit dVcom/dt = 20 V/s dVcom/dt = 10 V/s tgt gate-controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 2.5 3.5 2 A/ms A/ms s Min 600 Typ Max Unit V/s
BTA201W-600E and BTA201W-800E
1.6 VGT VGT(25C) 1.2
001aab101
3 IGT IGT(25C) 2
(1) (2) (3)
003aaa959
0.8
1
(3) (2) (1)
0.4 -50
0
50
100 Tj (C)
150
0 -50
0
50
100
Tj (C)
150
(1) T2- G- (2) T2+ G- (3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function of junction temperature
Fig 8. Normalized gate trigger current as a function of junction temperature
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
7 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
2 IT (A) 1.6
003aaa960
3 IL IL(25C) 2
001aab100
1.2
(1) (2)
0.8
(3)
1
0.4
0 0 0.4 0.8 1.2 1.6 2 VT (V)
0 -50
0
50
100 Tj (C)
150
Vo = 1.02 V; Rs = 358 m (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values
Fig 9. On-state current as a function of on-state voltage
3 IH IH(25C) 2
001aab099
Fig 10. Normalized latching current as a function of junction temperature
104 dVD/dt (V/s) 103
001aag740
1
102
0 -50
10 0 50 100 Tj (C) 150 0 50 100 Tj (C) 150
Gate open circuit
Fig 11. Normalized holding current as a function of junction temperature
Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
8 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
8. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC JEITA SC-73
EUROPEAN PROJECTION
ISSUE DATE 04-11-10 06-03-16
Fig 13. Package outline SOT223
BTA201W_SER_E_2 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
9 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
9. Mounting
9.1 Mounting instructions
3.8 min
1.5 min
6.3 1.5 min (3x) 1.5 min 4.6
001aab508
2.3
All dimensions are in mm
Fig 14. Minimum footprint SOT223
9.2 Printed-circuit board
36
18
60
9
4.6
4.5
10
7 15 50
001aab509
All dimensions are in mm Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick)
Fig 15. Printed-circuit board pad area SOT223
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
10 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
10. Revision history
Table 7. Revision history Release date 20070917 Data sheet status Product data sheet Change notice Supersedes BTA201W_SER_E_1 Document ID BTA201W_SER_E_2 Modifications:
* * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Descriptive titles have been corrected. Table 3 "Limiting values" on page 2: dIT/dt uprated Table 6 "Dynamic characteristics" on page 7: dVD/dt uprated Figure 12 "Critical rate of rise of off-state voltage as a function of junction temperature; minimum values" on page 8: graph updated Product data sheet -
BTA201W_SER_E_1
20060207
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
11 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BTA201W_SER_E_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 17 September 2007
12 of 13
NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Mounting instructions . . . . . . . . . . . . . . . . . . . 10 Printed-circuit board . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 September 2007 Document identifier: BTA201W_SER_E_2

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